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scanswitch ? npn bipolar power deflection transistor for high and very high resolution monitors the mjw16212 is a stateoftheart switchmode ? bipolar power transistor. it is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page, monochrome monitors. ? 1500 volt collectoremitter breakdown capability ? typical dynamic desaturation specified (new turnoff characteristic) ? application specific stateoftheart die design ? fast switching: 200 ns inductive fall time (typ) 2000 ns inductive storage time (typ) ? low saturation voltage: 0.15 volts at 5.5 amps collector current and 2.5 a base drive ? low collectoremitter leakage current e 250 m a max at 1500 volts e v ces ? high emitterbase breakdown capability for high voltage off drive circuits e 8.0 volts (min) ???????????????????????? ???????????????????????? maximum ratings ?????????????? ?????????????? rating ????? ????? symbol ???? ???? value ???? ???? unit ?????????????? ?????????????? collectoremitter breakdown voltage ????? ????? v ces ???? ???? 1500 ???? ???? vdc ?????????????? ?????????????? collectoremitter sustaining voltage ????? ????? v ceo(sus) ???? ???? 650 ???? ???? vdc ?????????????? ?????????????? emitterbase voltage ????? ????? v ebo ???? ???? 8.0 ???? ???? vdc ?????????????? ? ???????????? ? ? ???????????? ? ?????????????? rms isolation voltage (2) (for 1 sec, t a = 25 c, per fig. 14 rel. humidity < 30%) per fig. 15 ????? ? ??? ? ? ??? ? ????? v isol ???? ? ?? ? ? ?? ? ???? e e ???? ? ?? ? ? ?? ? ???? v ?????????????? ?????????????? collector current e continuous collector current e pulsed (1) ????? ????? i c i cm ???? ???? 10 15 ???? ???? adc ?????????????? ? ???????????? ? ?????????????? base current e continuous base current e pulsed (1) ????? ? ??? ? ????? i b i bm ???? ? ?? ? ???? 5.0 10 ???? ? ?? ? ???? adc ?????????????? ? ???????????? ? ?????????????? maximum repetitive emitterbase avalanche energy ????? ? ??? ? ????? w (ber) ???? ? ?? ? ???? 0.2 ???? ? ?? ? ???? mj ?????????????? ? ???????????? ? ?????????????? total power dissipation @ t c = 25 c total power dissipation @ t c = 100 c derated above t c = 25 c ????? ? ??? ? ????? p d ???? ? ?? ? ???? 150 39 1.49 ???? ? ?? ? ???? watts w/ c ?????????????? ?????????????? operating and storage temperature range ????? ????? t j , t stg ???? ???? 55 to 125 ???? ???? c preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 april, 2001 rev.4 1 publication order number: mjw16212/d mjw16212 power transistor 10 amperes 1500 volts v ces 50 and 150 watts *on semiconductor preferred device * case 340k01 to247ae
mjw16212 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? thermal characteristics ??????????????????? ??????????????????? characteristic ?????? ?????? symbol ??????? ??????? max ???? ???? unit ??????????????????? ??????????????????? thermal resistance e junction to case ?????? ?????? r q jc ??????? ??????? 0.67 ???? ???? c/w ??????????????????? ? ????????????????? ? ??????????????????? lead temperature for soldering purposes 1/8 from the case for 5 seconds ?????? ? ???? ? ?????? t l ??????? ? ????? ? ??????? 275 ???? ? ?? ? ???? c (1) pulse test: pulse width = 5.0 ms, duty cycle 10%. (2) proper strike and creepage distance must be provided. ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics (2) ??????????????????? ? ????????????????? ? collector cutoff current (v ce = 1500 v, v be = 0 v) collector cutoff current (v ce = 1200 v, v be = 0 v) ????? ? ??? ? i ces ???? ? ?? ? e e ??? ? ? ? e e ???? ? ?? ? 250 25 ??? ? ? ? m adc ??????????????????? ? ????????????????? ? emitterbase leakage (v eb = 8.0 vdc, i c = 0) ????? ? ??? ? i ebo ???? ? ?? ? e ??? ? ? ? e ???? ? ?? ? 25 ??? ? ? ? m adc ??????????????????? ? ????????????????? ? emitterbase breakdown voltage (i e = 1.0 ma, i c = 0) ????? ? ??? ? v (br)ebo ???? ? ?? ? 8.0 ??? ? ? ? 11 ???? ? ?? ? e ??? ? ? ? vdc ??????????????????? ??????????????????? collectoremitter sustaining voltage (table 1) (i c = 10 madc, i b = 0) ????? ????? v ceo(sus) ???? ???? 650 ??? ??? e ???? ???? e ??? ??? vdc ????????????????????????????????? ????????????????????????????????? on characteristics (2) ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 5.5 adc, i b = 2.2 adc) collectoremitter saturation voltage (i c = 3.0 adc, i b = 400 madc) ????? ? ??? ? ????? v ce(sat) ???? ? ?? ? ???? e e ??? ? ? ? ??? 0.15 0.14 ???? ? ?? ? ???? 1.0 1.0 ??? ? ? ? ??? vdc ??????????????????? ??????????????????? baseemitter saturation voltage (i c = 5.5 adc, i b = 2.2 adc) ????? ????? v be(sat) ???? ???? e ??? ??? 0.9 ???? ???? 1.5 ??? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (i c = 1.0 a, v ce = 5.0 vdc) dc current gain (i c = 10 a, v ce = 5.0 vdc) ????? ? ??? ? ????? h fe ???? ? ?? ? ???? e 4.0 ??? ? ? ? ??? 24 6.0 ???? ? ?? ? ???? e 10 ??? ? ? ? ??? e ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ??????????????????? dynamic desaturation interval (i c = 5.5 a, i b1 = 2.2 a, lb = 1.5 m h) ????? ????? t ds ???? ???? e ??? ??? 350 ???? ???? e ??? ??? ns ??????????????????? ??????????????????? output capacitance (v ce = 10 vdc, i e = 0, f test = 100 khz) ????? ????? c ob ???? ???? e ??? ??? 180 ???? ???? 350 ??? ??? pf ??????????????????? ? ????????????????? ? ??????????????????? gain bandwidth product (v ce = 10 vdc, i c = 0.5 a, f test = 1.0 mhz) ????? ? ??? ? ????? f t ???? ? ?? ? ???? e ??? ? ? ? ??? 2.75 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz ??????????????????? ? ????????????????? ? ??????????????????? emitterbase turnoff energy (eb (avalanche) = 500 ns, r be = 22 w ) ????? ? ??? ? ????? eb (off) ???? ? ?? ? ???? e ??? ? ? ? ??? 35 ???? ? ?? ? ???? e ??? ? ? ? ??? m j ??????????????????? ? ????????????????? ? ??????????????????? collectorheatsink capacitance e mjf16212 isolated package (mounted on a 1 x 2 x 1/16 copper heatsink, v ce = 0, f test = 100 khz) ????? ? ??? ? ????? c chs ???? ? ?? ? ???? e ??? ? ? ? ??? 5.0 ???? ? ?? ? ???? e ??? ? ? ? ??? pf ????????????????????????????????? ????????????????????????????????? switching characteristics ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? inductive load (i c = 5.5 a, i b = 2.2 a), high resolution deflection simulator circuit table 2 storage fall time ????? ? ??? ? ? ??? ? ????? t sv t fi ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? 2000 200 ???? ? ?? ? ? ?? ? ???? 4000 350 ??? ? ? ? ? ? ? ??? ns (2) pulse test: pulse width = 300 m s, duty cycle 2.0%.
mjw16212 http://onsemi.com 3 i c , collector current (a) v ce , collector-emitter voltage (v) figure 1. maximum forward bias safe operating area 50 1 10 1 0.02 70 bonding wire limit thermal limit second breakdown i c , collector-emitter current (a) 0.1 720 1k 20 0.2 dc t j = 25 c 5ms 10 m s 2 5 0.5 50 300 1500 i c /i b = 5 t j 100 c 0 v ce , collector-emitter voltage (v) 900 figure 2. maximum reverse bias safe operating area 10 18 6 2 600 1200 100 0.05 0.01 100 3 10 200 30 mjh16212 14 2 300 500 5 700 100 ns ii safe operating area forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 1 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 1 may be found at any case temperature by using the appropriate curve on figure 3. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 3. power derating 25 t c , case temperature ( c) 0 45 85 125 0.6 power derating factor second breakdown derating 1 0.8 0.4 0.2 65 thermal derating 105 reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the basetoemitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse biased safe operating area and represents the voltagecurrent condition allowable during reverse biased turnoff. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 2 gives the rbsoa characteristics.
mjw16212 http://onsemi.com 4 h.p. 214 or equiv. p.g. 0 -35 v 50 500 1 m f 100 -v 2n5337 2n6191 +v 11 v 100 0.02 m f 20 10 m f 0.02 m f +- r b1 r b2 a a 50 t 1 +v 0 v -v *i b *i c t.u.t . l mr856 v clamp v cc i c v ce i b i b1 i b2 i c(pk) v ce(pk) t 1 l coil (i cpk ) v cc note: adjust v to obtain desired v be ( off ) at point a. t 1 adjusted to obtain i c(pk) v (br)ceo l = 10 mh r b2 = v cc = 20 volts rbsoa l = 200 m h r b2 = 0 v cc = 20 volts r b1 selected for desired i b1 *tektronix * p6042 or * equivalent + - table 1. rbsoa/v (br)ceo(sus) test circuit
mjw16212 http://onsemi.com 5 v ce , collector-emitter voltage (v) v ce , collector-emitter voltage (v) figure 4. typical collectoremitter saturation region i b , base current (a) 0.7 0.1 .03 0.3 0.3 10 a .05 1 2 4 5.5 i c = 2 0.03 0.1 0.2 0.5 0.02 5 10 t j = 25 c 0.5 0.07 0.2 0.05 0.01 3 7 2 1 3 i c , collector current (a) figure 5. typical collectoremitter saturation voltage 0.5 3 0.2 5 10 1 0.1 7 0.3 2 0.7 0.5 3 25 0.7 1 0.1 0.2 0.3 7 8 .02 .01 5 7 10 i c /i b = 5 t j = 100 c = 25 c i c /i b = 10 t j = 100 c = 25 c 10 c, capacitance (pf) f , transition frequency t v be , base-emitter voltage (v) figure 6. typical emitterbase saturation voltage 0.3 0.2 0.5 5 0.7 0.1 0.7 0.1 1 10 10 2 23 57 i c , collector current (a) i c /i b = 5 t j = 100 c 0.3 7 1 0.2 3 0.5 i c , collector current (a) figure 7. typical transition frequency v ce = 10 v f (test) = 1 mhz t c = 25 c 01 2 3 4 6 5 5 2 0 4 3 1 figure 8. typical capacitance 10000 v r , reverse voltage (v) c ib 1 500 20 1 7 50 300 1000 50 2 2000 100 5000 200 10 3 10 100 70 5 30 200 1000 5 2 20 500 f test = 1 mhz = 25 c i c /i b = 10 t j = 100 c = 25 c c ob
mjw16212 http://onsemi.com 6 dynamic desaturatiion the scanswitch series of bipolar power transistors are specifically designed to meet the unique requirements of horizontal deflection circuits in computer monitor applications. historically, deflection transistor design was focused on minimizing collector current fall time. while fall time is a valid figure of merit, a more important indicator of circuit performance as scan rates are increased is a new characteristic, adynamic desaturation.o in order to assure a linear collector current ramp, the output transistor must remain in hard saturation during storage time and exhibit a rapid turnoff transition. a sluggish transition results in serious consequences. as the saturation voltage of the output transistor increases, the voltage across the yoke drops. roll off in the collector current ramp results in improper beam deflection and distortion of the image at the right edge of the screen. design changes have been made in the structure of the scanswitch series of devices which minimize the dynamic desaturation interval. dynamic desaturation has been defined in terms of the time required for the v ce to rise from 1.0 to 5.0 volts (figures 9 and 10) and typical performance at optimized drive conditions has been specified. optimization of device structure results in a linear collector current ramp, excellent turnoff switching performance, and significantly lower overall power dissipation. u2 mc7812 v i v o g n d + + + + +24 v c1 100 m f c2 10 m f c3 10 m f r7 2.7 k r8 9.1 k r9 470 r10 47 c5 0.1 c4 0.005 r2 r510 r3 250 r6 1 k r12 470 1 w d1 mur110 t1 lb r4 22 q4 dut v ce cy ly c6 100 m f r5 1 k (ic) (ib) q5 mj11016 q2 mj11016 q3 mje 15031 r11 470 1 w 100 v d2 mur460 u1 mc1391p % osc v cc out gnd 76 81 2 (dc) bs170 q1 sync table 2. high resolution deflection application simulator r1 1 k 6.2 v t1: ferroxcube pot core #1811 p3c8 lb = 1.5 m h primary/sec. turns ratio = 18:6 cy = 0.01 m f gapped for l p = 30 m h ly = 13 m h
mjw16212 http://onsemi.com 7 v ce , collector-emitter voltage (v) i b , base current (a) figure 9. deflection simulator circuit base drive waveform time (2 m s/div) i b1 = 1.3 a figure 10. definition of dynamic desaturation measurement time (ns) t ds dynamic desaturation time is measured from v ce = 1 v to v ce = 5 v 1 4 5 0 3 2 068 4 210 i b2 = 4.9 a i c , collector current (a) figure 11. typical resistive storage time t s , resistive storage time ( s) 15 5 2 3 7 12 7 5 3 i c , collector current (a) figure 12. typical resistive fall time t f , resistive fall time ( s) 700 100 300 1500 23 57 110 200 500 b f = 5 t j = 25 c m m i b2 = i b1 i b2 = 2 (i b1 ) b f = 5 t j = 25 c i b2 = i b1 i b2 = 2 (i b1 ) 10 1000 1 10 15 15
mjw16212 http://onsemi.com 8 t s and t f +15 150 w 100 w 100 m f mtp8p10 mpf930 mpf930 mur105 mje210 150 w 500 m f v off 50 w +10 v mtp12n10 mtp8p10 r b1 r b2 a 1 m f 1 m f t.u.t . *i c *i b a r l v cc v (off) adjusted to give specified off drive v cc 250 v r l 28 w i c 5.5 a i b1 1.1 a i b2 per spec r b1 3.3 w r b2 per spec table 3. resistive load switching t, time (ms) 0.01 110 0.1 1 0.2 0.1 0.05 r(t), transient thermal r q jc (t) = r(t) r q jc r q jc = 0.7 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 single pulse resistance (normalized) figure 13. thermal response 0.5 d = 0.5 100 1000 10000 0.2 0.1 emitterbase turnoff energy, eb (off) emitterbase turnoff energy is a new specification included on the scanswitch data sheets. typical techniques for driving horizontal outputs rely on a pulse transformer to supply forward base current, and a turnoff network that includes a series base inductor to limit the rate of transition from forward to reverse. an alternate drive scheme has been used to characterize the scanswitch series of devices (see figure 2). this circuit ramps the base drive to eliminate the heavy overdrive at the beginning of the collector current ramp and underdrive just prior to turnoff observed in typical drive topologies. this high performance drive has two additional important advantages. first, the configuration of t1 allows l b to be placed outside the path of forward base current making it unnecessary to expend energy to reverse the current flow as in a series based inductor. second, there is no base resistor to limit forward base current and hence no power loss associated with setting the value of the forward base current. the ramp generating process stores rather than dissipates energy. tailoring the amount of energy stored in t1 to the amount of energy, eb (off) , that is required to turn the output transistor off results in essentially lossless operation. [note: b+ and the primary inductance of t1 (l p ) are chosen such that 1/2l p l b 2 = eb (off) .]
mjw16212 http://onsemi.com 9 figure 14. screw or clip mounting position for isolation test number 1 *measurement made between leads and heatsink with all leads shorted together leads heatsink 0.099" min figure 15. screw or clip mounting position for isolation test number 2 mounted fully isolated package leads heatsink mounted fully isolated package 0.110" min test conditions for isolation tests* (mjf16212 only) 4-40 screw plain washer heatsink compression washer nut clip heatsink laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. the compression washer helps to maintain a con- stant pressure on the package over time and during large temperature excursions. destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the pack- age. however, in order to positively ensure the package integrity of the fully isolated device, on semiconductor does not reco mmend exceeding 10 in . lbs of mounting torque under any mounting conditions. figure 16. typical mounting techniques* figure 16a. screwmounted figure 16b. clipmounted mounting information** (mjf16212 only) ** for more information about mounting power semiconductors see application note an1040.
mjw16212 http://onsemi.com 10 package dimensions case 340k01 issue c to247ae notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. r p a k v f d g u l e 0.25 (0.010) m tb m 0.25 (0.010) m yq s j h c 4 123 t b y q dim min max min max inches millimeters a 19.7 20.3 0.776 0.799 b 15.3 15.9 0.602 0.626 c 4.7 5.3 0.185 0.209 d 1.0 1.4 0.039 0.055 e 1.27 ref 0.050 ref f 2.0 2.4 0.079 0.094 g 5.5 bsc 0.216 bsc h 2.2 2.6 0.087 0.102 j 0.4 0.8 0.016 0.031 k 14.2 14.8 0.559 0.583 l 5.5 nom 0.217 nom p 3.7 4.3 0.146 0.169 q 3.55 3.65 0.140 0.144 r 5.0 nom 0.197 nom u 5.5 bsc 0.217 bsc v 3.0 3.4 0.118 0.134
mjw16212 http://onsemi.com 11 notes
mjw16212 http://onsemi.com 12 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjw16212/d scanswitch is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland switchmode is a trademark of semiconductor components industries, llc.

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